Studies of oxide-based thin-layered hetero structures by X-ray scattering methods

被引:6
|
作者
Durand, O.
Rogers, D.
Teherani, F. Hosseini
Andrieux, M.
Modreanu, M.
机构
[1] Thales Res & Technol France, F-91767 Palaiseau, France
[2] Nanovat SARL, F-91400 Orsay, France
[3] Univ Orsay, LEMHE, ICMMO, CNRS,UMR 8182, F-91410 Orsay, France
[4] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
关键词
X-ray reflectometry; X-ray diffractometry; high-k oxides; ZnO;
D O I
10.1016/j.tsf.2006.11.111
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Some X-ray scattering methods (X-ray reflectometry and Diffractometry) dedicated to the study of thin-layered heterostructures are presented with a particular focus, for practical purposes, on the description of fast, accurate and robust techniques. The use of X-ray scattering metrology as a routinely working non-destructive testing method, particularly by using procedures simplifying the data-evaluation, is emphasized. The model-independent Fourier-inversion method applied to a reflectivity curve allows a fast determination of the individual layer thicknesses. We demonstrate the capability of this method by reporting X-ray reflectometry study on multilayered oxide structures, even when the number of the layers constitutive of the stack is not known a-priori. Fast Fourier transform-based procedure has also been employed successfully on high resolution X-ray diffraction profiles. A study of the reliability of the integral-breadth methods in diffraction line-broadening analysis applied to thin layers, in order to determine coherent domain sizes, is also reported. Examples from studies of oxides-based thin-layers heterostructures will illustrate these methods. In particular, X-ray scattering studies performed on high-k HfO(2) and SrZrO(3) thin-layers, a (GaAs/AlOx) waveguide, and a ZnO thin-layer are reported. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:6360 / 6367
页数:8
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