Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide

被引：21
|
作者：
Zhuravlev, KS [1 ]
Kobitsky, AY [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 10期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1317584
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The kinetics of photoluminescence (PL) and steady-state PL from silicon nanocrystals formed in the SiO2 matrix by silicon ion implantation were studied experimentally for the first time in the temperature range from liquid-helium to room temperature. A dramatic increase in the photoluminescence decay time, accompanied by PL intensity quenching, is observed below 70 K. The results obtained indicate that the silicon nanocrystal PL arises from radiative recombination of excitons self-trapped at the silicon nanocrystal-SiO2 interface. (C) 2000 MAIK "Nauka/ Interperiodica".
引用
收藏
页码：1203 / 1206
页数：4
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