Enhancing the Performance of Organic Thin-Film Transistor using a Buffer Layer

被引：0
|
作者：
Wu, Chung-Ming [1 ]
Su, Shui-Hsiang [1 ]
Kung, Shu-Yi [1 ]
Yokoyama, Meiso [1 ]
Huang, Tsung-Syun [2 ]
Su, Yan-Kuin [2 ]
机构：
[1] I Shou Univ, Dept Elect Engn, Kaohsiung 840, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
来源：
ICPADM 2009: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1-3 | 2009年
关键词：
buffer layer; OTFTs; on/off ratio;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vanadium oxide (V2O5) and 4,4',4 ''-tris(N-3-methylphenyl-N-phenyl-amino)-triphen ylamine (m-MTDATA) doped V2O5 film, respectively, is used as a buffer layer between source/drain electrodes and organic active layer in organic thin film transistors (OTFTs) to improve the electrical characteristics. Results show that the saturation current, mobility, threshold voltage, and on/off ratio are improved of the proposed OTFT with a buffer layer, especially on/off ratio is about five times than that of the device without a buffer layer.
引用
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页码：1241 / +
页数：2
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