Property of a hydrogen-terminated Si(100) surface and its interaction with Ga adsorbates

A Hydrogen-terminated Si(100)-2 x 2-H surface and its interaction with thermally deposited Ga atoms were investigated by scanning tunneling microscopy (STM). We found that the Ga atoms migrate on the hydrogen-terminated area, and preferentially adsorb on the hydrogen-missing dangling bonds. Several methods of manipulating (detaching, attaching and moving) hydrogen atoms were tested. Dangling-bond wires were fabricated by the STM current and atomic-scale Ga wires were fabricated on the Si surface for the first time by thermally depositing Ga atoms on the dangling-bond wires.