Property of a hydrogen-terminated Si(100) surface and its interaction with Ga adsorbates

被引：0
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作者：
Hashizume, T
Heike, S
Lutwyche, MI
Watanabe, S
Wada, Y
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来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1997年 / 31卷 / 03期
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O4 [物理学];
学科分类号：
0702 ;
摘要：
A Hydrogen-terminated Si(100)-2 x 2-H surface and its interaction with thermally deposited Ga atoms were investigated by scanning tunneling microscopy (STM). We found that the Ga atoms migrate on the hydrogen-terminated area, and preferentially adsorb on the hydrogen-missing dangling bonds. Several methods of manipulating (detaching, attaching and moving) hydrogen atoms were tested. Dangling-bond wires were fabricated by the STM current and atomic-scale Ga wires were fabricated on the Si surface for the first time by thermally depositing Ga atoms on the dangling-bond wires.
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页码：452 / 455
页数：4
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