Simulations of Si and SiO2 Etching in SF6+O2 Plasma

被引：24

作者：

Knizikevicius, R. ^{[1
]}

机构：

[1] Kaunas Univ Technol, Dept Phys, LT-44029 Kaunas, Lithuania

来源：

ACTA PHYSICA POLONICA A | 2010年 / 117卷 / 03期

关键词：

FLUORINE-ATOMS; LOW-TEMPERATURES; SF6/O-2; PLASMA; SILICON; DESORPTION; MECHANISM; MIXTURES; TRENCHES; DENSITY; ENERGY;

D O I：

10.12693/APhysPolA.117.478

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The plasma chemical etching of Si and SiO2 in SF6+O-2 plasma is considered. The concentrations of plasma components are calculated by fitting the experimental data. The derived concentrations of plasma components are used for the calculation of Si and SiO2 etching rates. It is found that the reaction probabilities of F atoms with Si atoms and SiO2 molecules are equal to epsilon = (8.75 +/- 0.41) x 10(-3) and epsilon = (7.18 +/- 0.45) x 10(-5), respectively. The influence of O-2 addition to SF6 plasma on the etching rate of Si is determined.

引用

页码：478 / 483

页数：6

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