Memory Circuit Design, Implementation and Analysis Based on Memristor Full-function Pavlov Associative

Associative memory is an important mechanism describing biological learning process and forgetting process, which is of great significance for constructing neuromorphic computing systems, as well as simulating brain-like functions. As a result, the design and implementation of associative memory circuit has become a research hotspot in the field of artificial neural networks. Pavlov conditioning experiment, as one of the classic cases of associative memory, its hardware implementation still suffers from some limitations such as complex circuit configuration, imperfect function and unclear process description. Based on this, a memory circuit is proposed based on memristor full-fuction pavlov associative in this paper, which combines the classical conditioned reflection theory and nano science and technology. Firstly, the Ag/TiOx nanobelt/Ti memristor is prepared using hydrothermal synthesis method and magnetron sputtering method, and its performance testing is conducted jointly by electrochemical workstation, four-probe test bench, and transmission electron microscope. Then, the mathematical model and SPICE circuit model of the Ag/TiOx nanobelt/Ti memristor are built up respectively, based on the electrochemical data derived from the performance testing, and the model accuracy is verified by objective evaluation. Furthermore, the proposed Ag/TiOx nanobelt/Ti memristor model is applied to the implementation of a full-function Pavlovian associative memory circuit. The specific circuit description and function analysis illustrate that this circuit is able to simulate two kinds of learning process and three kinds of forgetting process in Pavlov experiment. Finally, a series of computer simulation and analysis are carried out, which verifies the validity and effectiveness of the entire scheme.