Effect of V2O5 addition on the microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics

被引：3
|
作者：
Shan, Liu [1 ]
Wei, Pan [1 ]
机构：
[1] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源：
HIGH-PERFORMANCE CERAMICS IV, PTS 1-3 | 2007年 / 336-338卷
基金：
中国国家自然科学基金;
关键词：
microwave dielectrics; Ba(Mg1/3Nb2/3)O-3; complex perovskites;
D O I：
10.4028/www.scientific.net/KEM.336-338.301
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effect of V2O5 as additives of different content on the densification, microstructure and dielectric properties of Ba(Mg1/3Nb2/3)O-3 (BMN) was investigated. The sintering temperature of the V2O5-doped BMN samples were lowered down to 1250 degrees C with 0.5wt% V2O5 compared to pure BMN ceramics where the sintering temperature was 1500 degrees C at least. The epsilon(r) and tau(f) was not influenced much, while the Q value was affected by the sintering temperature and the V2O5 additives. The Q value decreased with decrease of the sintering temperature and the V2O5 addition increasing due to the bulk density and the second phase. Good microwave dielectric properties of Q center dot f=42100GHz, epsilon(r) =31.7 and temperature coefficient of resonance frequency (tau(f)) =22.7ppm/degrees C were obtained with 0.25 wt% V2O5 sintered at 1350 degrees C for 4 h.
引用
收藏
页码：301 / +
页数：2
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