Effect of V2O5 addition on the microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics

The effect of V2O5 as additives of different content on the densification, microstructure and dielectric properties of Ba(Mg1/3Nb2/3)O-3 (BMN) was investigated. The sintering temperature of the V2O5-doped BMN samples were lowered down to 1250 degrees C with 0.5wt% V2O5 compared to pure BMN ceramics where the sintering temperature was 1500 degrees C at least. The epsilon(r) and tau(f) was not influenced much, while the Q value was affected by the sintering temperature and the V2O5 additives. The Q value decreased with decrease of the sintering temperature and the V2O5 addition increasing due to the bulk density and the second phase. Good microwave dielectric properties of Q center dot f=42100GHz, epsilon(r) =31.7 and temperature coefficient of resonance frequency (tau(f)) =22.7ppm/degrees C were obtained with 0.25 wt% V2O5 sintered at 1350 degrees C for 4 h.