Anisotropic phonon softening of uniaxially strained bilayer graphene

被引:3
|
作者
Cho, Yujin [1 ]
Jegal, Seonyoung [1 ]
Lee, Jae-Ung [1 ]
Yoon, Duhee [1 ,4 ]
Choi, Seon-Myoung [2 ,3 ]
Son, Young-Woo [2 ]
Cheong, Hyeonsik [1 ]
机构
[1] Sogang Univ, Dept Phys, 35 Baekbeom Ro, Seoul 04107, South Korea
[2] Korea Inst Adv Study, Sch Computat Sci, 85 Hoegi Ro, Seoul 02455, South Korea
[3] Samsung Adv Inst Technol, Suwon 16678, Gyeonggi Do, South Korea
[4] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
基金
新加坡国家研究基金会;
关键词
RESONANT RAMAN-SCATTERING; POLARIZATION DEPENDENCE; QUASI-PARTICLE; GAPS; BAND;
D O I
10.1016/j.carbon.2016.03.047
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of strain on the phonon dispersion of bilayer graphene has been studied by polarized Raman spectroscopy on uniaxially strained bilayer graphene. Each of the four peaks that constitute the Raman 2D band splits and redshifts under strain, with the shift rate depending on the strain direction relative to the crystallographic orientation. By comparing the experimental data with first-principles calculation results, it is shown that the splitting and the redshift of the peaks originate from the anisotropic modifications of the phonon dispersion and the electronic band structure of bilayer graphene. The intensity of each peak also depends on the magnitude and direction of strain, which can be explained in terms of the correlation with the momentum of the phonon involved in the Raman scattering path. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:473 / 479
页数:7
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