Millimeter-Wave and Power Characterization for Integrated Circuits

被引：0
|
作者：
de Matos, M. [1 ]
Kerherve, E. [1 ]
Lapuyade, H. [1 ]
Begueret, J-B. [1 ]
Deval, Y. [1 ]
机构：
[1] Univ Bordeaux, CNRS, UMR 5218, IMS Lab, F-33405 Talence, France
来源：
2009 EAEEIE ANNUAL CONFERENCE | 2009年
关键词：
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper presents a training in characterization of integrated circuits for millimeter-wave and power applications. The goal of this training is to initiate the student to millimeter-wave measurements. The training is based on high performance equipments like a VNA (Vector Network Analyzer) up to 110GHz, two probe stations and a millimeter wave load-pull facility. The devices under test (DUT) are power amplifiers at 60GHz and 77GHz implemented in CMOS and BiCMOS technologies from STMicroelectronics on silicon substrate. Other radiofrequency component characterizations are also studied.
引用
收藏
页码：107 / 110
页数：4
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