Synthesis of High-Quality Vertically Aligned Carbon Nanotubes on Bulk Copper Substrate for Thermal Management

被引:51
|
作者
Lin, Wei [1 ]
Zhang, Rongwei
Moon, Kyoung-Sik
Wong, C. P.
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
来源
基金
美国国家科学基金会;
关键词
Carbon nanotube; chemical vapor deposition (CVD); thermal interface materials; ATOMIC LAYER DEPOSITION; METALLIC SUBSTRATE; OXIDE THICKNESS; GROWTH; SILICON; DIFFUSION; IRON; FILMS; CONDUCTIVITY; ENHANCEMENT;
D O I
10.1109/TADVP.2009.2034335
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vertically aligned carbon nanotubes (VACNTs) grown on bulk copper substrate are of great importance for real-life commercial applications of carbon nanotubes (CNTs) as thermal interface materials in microelectronic packaging. However, their reproducible syntheses have been a great challenge so far. In this study, by introducing a well-controlled conformal Al2O3 support layer on the bulk copper substrate by atomic layer deposition, we reproducibly synthesized VACNTs of good alignment and high quality on the copper substrate. The alignment and the quality were characterized by scanning electron microscope, transmission electron microscope, and Raman spectroscopy. The key roles of the conformal Al2O3 support layer by atomic layer deposition are discussed. This progress may provide a real-life VACNT application for thermal management.
引用
收藏
页码:370 / 376
页数:7
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