Epitaxial PLT thin films prepared by a sol-gel process

被引：0
|
作者：
Zhou, QF [1 ]
Chan, HLW
Zhang, QQ
Choy, CL
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China
来源：
FERROELECTRICS | 1999年 / 232卷 / 1-4期
关键词：
epitaxy; thin film; sol-gel;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Lead lanthanum titanate (PLT) ferroelectric thin films with (001) orientation have been epitaxially grown on La0.5Sr0.5CoO3(LSCO)/LaALO(3)(LAO) substrates by a sol-gel process followed by rapid annealing at 650 degreesC. PLT(111) films have also been successfully prepared on Pt(111)Ti/SiO2/Si substrates. 2 theta scans, phi scans and rocking curves obtained in x-ray diffraction measurements reveal the high epitaxy of these films. The PLT (111) films exhibit good dielectric and ferroelectric properties and may be useful as infrared sensors.
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收藏
页码：933 / 938
页数：6
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