Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals

被引：5
|
作者：
Guler, I. [1 ]
Gasanly, N. M. [2 ]
机构：
[1] Cankaya Univ, Dept Mat Sci & Engn, TR-06810 Ankara, Turkey
[2] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey
来源：
APPLIED SURFACE SCIENCE | 2014年 / 318卷
关键词：
Layered crystals; Raman line widths; Crystal disorder; SINGLE-CRYSTALS; SOLID-SOLUTIONS; TLINS2; TEMPERATURE; SCATTERING; DISORDER; TLGASE2; SHAPES;
D O I：
10.1016/j.apsusc.2014.01.131
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：113 / 115
页数：3
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