Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals

被引：5

作者：

Guler, I. ^{[1
]}

Gasanly, N. M. ^{[2
]}

机构：

[1] Cankaya Univ, Dept Mat Sci & Engn, TR-06810 Ankara, Turkey

[2] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey

来源：

APPLIED SURFACE SCIENCE | 2014年 / 318卷

关键词：

Layered crystals; Raman line widths; Crystal disorder; SINGLE-CRYSTALS; SOLID-SOLUTIONS; TLINS2; TEMPERATURE; SCATTERING; DISORDER; TLGASE2; SHAPES;

D O I：

10.1016/j.apsusc.2014.01.131

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：113 / 115

页数：3

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