Fabrication of p-type ZnO thin films via DC reactive magnetron sputtering by using Na as the dopant source

The Na-doped p-type ZnO thin films were prepared by DC reactive magnetron sputtering. Two types of substrates were used for separate testing purposes: silicon wafers for crystallinity measurements and glass slides for electrical and optical transmittance measurements. The lowest room-temperature resistivity under the optimal condition was 69.9 Omega cm, with a Hall mobility of 0.406 cm(2) V(-1)s(-1) and a carrier concentration of 2.57 x 10(17) cm(-3). The Na-doped ZnO thin films possessed a good crystallinity with c-axis orientation and a high transmittance (similar to 85%) in the visible region. The effects of the substrate temperature on the crystallinity and the electrical properties were discussed.