Thermoelectric figure of merit of II-VI semiconductor nanowires

被引：51

作者：

Mingo, N ^{[1
]}

机构：

[1] NASA, Ames Ctr Nanotechnol, Moffett Field, CA 94035 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期

关键词：

D O I：

10.1063/1.1829391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room temperature thermoelectric figure of merit and power factor are calculated for bulk and nanowires made of CdTe, ZnTe, ZnSe, and ZnS, of the zincblende structure. To this end, an iterative solution of the Boltzmann transport equation is used to obtain the electronic transport properties. The lattice thermal conductivity is estimated using a full dispersion transmission function approach. A saturation to finite values is predicted for the power factor in the small thickness limit. The figure of merit increase upon thickness reduction is largest for CdTe, followed by ZnTe, ZnSe, and ZnS. II-VI nanowires show smaller increases of the figure of merit as compared with III-V nanowires, despite their bulk values are of comparable magnitude in the two groups. The reasons for this are explained. (C) 2004 American Institute of Physics.

引用

页码：5986 / 5988

页数：3

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