Ozone-based batch atomic layer deposited Al2O3 for effective surface passivation

被引:20
|
作者
von Gastrow, Guillaume [1 ]
Li, Shuo [1 ,2 ]
Repo, Paivikki [1 ]
Bao, Yameng [1 ]
Putkonen, Matti [3 ]
Savin, Hele [1 ]
机构
[1] Aalto Univ, Dept Micro & Nanosci, Tietotie 3, Espoo 02150, Finland
[2] Beneq Oy, FI-01511 Vantaa, Finland
[3] VTT Tech Res Ctr Finland, F-02044 Espoo, Finland
基金
芬兰科学院;
关键词
Atomic layer deposition; ozone; aluminum oxide; Si surface passivation;
D O I
10.1016/j.egypro.2013.07.361
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this paper we compare water and ozone as oxidants in the Al2O3 ALD reaction in terms of surface passivation quality. The experiments show that O-3 produces a high negative charge density up to 7.10(12) cm(-2) even in as-deposited film, which is different from water based Al2O3 that requires a separate annealing step to activate the negative charge. In general, the ozone process produces lower interface defect density (D-it) and higher negative charge density, which contributes to the higher lifetime value than corresponding water process. Most importantly, ozone-based Al2O3 shows much better firing stability than water-based Al2O3. Ozone concentration is also shown to play a role in the surface passivation quality. Finally, we found out that inserting a water pulse after the ozone pulse can lower the D-it further resulting in even higher lifetime. (C) 2013 The Authors. Published by Elsevier Ltd.
引用
收藏
页码:890 / 894
页数:5
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