Preparation and optical studies on flash evaporated Sb2S3 thin films

被引:35
|
作者
Mahanty, S
Merino, JM
Leon, M
机构
[1] Depto. de Física Aplicada, C-XII, Univ. Autónoma de Madrid
关键词
D O I
10.1116/1.580847
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin films of Sb2S3 were prepared by flash evaporation. As-deposited films were found to be amorphous and highly resistive (R>10(6) Ohm) in nature. An amorphous-crystalline phase transition occurs at 498 K on subsequent annealing in nitrogen atmosphere. The fundamental optical transition is direct in nature and the optical band gaps (E-g) lie in the region 1.70-2.07 and 1.42-1.65 eV for amorphous and crystalline films, respectively. A near-linear decrease in E-g with decreasing S/Sb ratio was observed suggesting the dependence of the band gap on film composition. (C) 1997 American Vacuum Society. [S0734-2101(97)03306-X].
引用
收藏
页码:3060 / 3064
页数:5
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