Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density

被引：10

作者：

Vignaud, D. ^{[1
]}

Yarekha, D. A. ^{[1
]}

Lampin, J. F. ^{[1
]}

Zaknoune, M. ^{[1
]}

Godey, S. ^{[1
]}

Mollot, F. ^{[1
]}

机构：

[1] CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

关键词：

D O I：

10.1063/1.2748336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron lifetime has been measured by time-resolved differential transmission experiments in heavily carbon-doped p-type InGaAs and GaAsSb, grown lattice matched on InP by molecular beam epitaxy. It is found inversely proportional to the square of the doping in both alloys, a result typical of Auger recombination dominated processes. It is shown that the electron lifetime is almost twice larger in GaAsSb than in InGaAs for large p-type doping, thus confirming that GaAsSb is a strong contender for the base material of double heterostructure bipolar transistors on InP. (c) 2007 American Institute of Physics.

引用

页数：3

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