Minority-Carrier Lifetime and Surface Recombination Velocity in Single-Crystal CdTe

被引：47

作者：

Kuciauskas, Darius ^{[1
]}

Kanevce, Ana ^{[1
]}

Dippo, Pat ^{[1
]}

Seyedmohammadi, Shahram ^{[2
]}

Malik, Roger ^{[2
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] First Solar, Santa Clara, CA USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 01期

关键词：

Cadmium compounds; charge-carrier lifetime; photovoltaic cells; photoluminescence (PL); GROWN CDTE; PHOTOLUMINESCENCE; BAND; LUMINESCENCE;

D O I：

10.1109/JPHOTOV.2014.2359738

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We apply an earlier developed method [Kuciauskas et al., IEEE J. Photovoltaics, vol. 3, p. 1319, 2013] to analyze surface and bulk recombination in high-quality undoped single-crystal CdTe. By using two-photon excitation time-resolved photoluminescence, we determined a room-temperature minority-carrier lifetime of 360 ns. This lifetime has weak temperature dependence at 202-295 K. We also show that the high surface recombination velocity (> 10(5) cm/s) typical for single-crystal CdTe was reduced by an order of magnitude to approximate to 1 x 10(4) cm/s.

引用

页码：366 / 371

页数：6

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