Energy level alignment at Co/AlOx/pentacene interfaces

被引:16
|
作者
Popinciuc, M. [1 ]
Jonkman, H. T. [1 ]
van Wees, B. J. [1 ]
机构
[1] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
关键词
D O I
10.1063/1.2721885
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray and ultraviolet photoemission spectroscopy (XPS and UPS) experiments were performed in order to study the energy level alignment and electronic structure at Co/AlOx/pentacene interfaces as a function of the aluminum oxide (AlOx) tunnel barrier thickness and the oxidation state of Co. XPS was used to determine the oxygen exposure for the optimum oxidation of 6, 8, and 10 A thin layers of Al deposited on Co. The Fermi level (FL) position in the band gap of AlOx depends on the oxidation state of the underlying Co and on the thickness of the tunnel barrier. The energy level alignment at Co/AlOx interfaces is consistent with an interfacial dipole, its magnitude being sensitive to the oxidation of Co, and band bending phenomena in the thin AlOx tunnel barrier. UPS experiments revealed no chemical interaction at Co/AlOx/pentacene interface in contrast with hybridization effects found at Co/pentacene interface. The vacuum level of pentacene aligns with that of AlOx, following the position of AlOx energy levels with respect to FL. The hole injection barrier was found to increase with the thickness of the tunnel barrier and to decrease with the oxidation of Co at a fixed thickness of the AlOx layer. (c) 2007 American Institute of Physics.
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Energy level alignment and band bending at model interfaces of organic electroluminescent devices
    Ishii, H
    Oji, H
    Ito, E
    Hayashi, N
    Yoshimura, D
    Seki, K
    JOURNAL OF LUMINESCENCE, 2000, 87-9 : 61 - 65
  • [42] Unexpected interplay of bonding height and energy level alignment at heteromolecular hybrid interfaces
    Stadtmueller, Benjamin
    Lueftner, Daniel
    Willenbockel, Martin
    Reinisch, Eva M.
    Sueyoshi, Tomoki
    Koller, Georg
    Soubatch, Serguei
    Ramsey, Michael G.
    Puschnig, Peter
    Tautz, F. Stefan
    Kumpf, Christian
    NATURE COMMUNICATIONS, 2014, 5 : 1 - 7
  • [43] Energy Level Alignment at Metal/Solution-Processed Organic Semiconductor Interfaces
    Atxabal, Ainhoa
    Braun, Slawomir
    Arnold, Thorsten
    Sun, Xiangnan
    Parui, Subir
    Liu, Xianjie
    Gozalvez, Cristian
    Llopis, Roger
    Mateo-Alonso, Aurelio
    Casanova, Felix
    Ortmann, Frank
    Fahlman, Mats
    Hueso, Luis E.
    ADVANCED MATERIALS, 2017, 29 (19)
  • [44] Energy-Level Alignment Tuning at Tetracene/c-Si Interfaces
    Niederhausen, Jens
    MacQueen, Rowan W.
    Ozkol, Engin
    Gersmann, Clemens
    Futscher, Moritz H.
    Liebhaber, Martin
    Friedrich, Dennis
    Borgwardt, Mario
    Mazzio, Katherine A.
    Amsalem, Patrick
    Minh Hai Nguyen
    Daiber, Benjamin
    Mews, Mathias
    Rappich, Joerg
    Ruske, Florian
    Eichberger, Rainer
    Ehrler, Bruno
    Lips, Klaus
    JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (51): : 27867 - 27881
  • [45] Role of Solvent in the Energy Level Alignment of Dye-Sensitized NiO Interfaces
    Piccinin, Simone
    Rocca, Dario
    Pastore, Mariachiara
    JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 121 (40): : 22286 - 22294
  • [46] A comprehensive and unified picture of energy-level alignment at interfaces with organic semiconductors
    Akaike, Kouki
    Oehzelt, Martin
    Heimel, Georg
    Koch, Norbert
    ORGANIC LIGHT EMITTING MATERIALS AND DEVICES XX, 2016, 9941
  • [47] Origin of the energy level alignment at organic/organic interfaces: The role of structural defects
    Bussolotti, Fabio
    Yang, Jinpeng
    Hinderhofer, Alexander
    Huang, Yuli
    Chen, Wei
    Kera, Satoshi
    Wee, Andrew T. S.
    Ueno, Nobuo
    PHYSICAL REVIEW B, 2014, 89 (11):
  • [48] Organic semiconductor density of states controls the energy level alignment at electrode interfaces
    Oehzelt, Martin
    Koch, Norbert
    Heimel, Georg
    NATURE COMMUNICATIONS, 2014, 5
  • [49] Organic semiconductor density of states controls the energy level alignment at electrode interfaces
    Martin Oehzelt
    Norbert Koch
    Georg Heimel
    Nature Communications, 5
  • [50] Energy level alignment and morphology of interfaces between molecular and polymeric organic semiconductors
    Zhang, Ft
    Vollmer, A.
    Zhang, J.
    Xu, Z.
    Rabe, J. P.
    Koch, N.
    ORGANIC ELECTRONICS, 2007, 8 (05) : 606 - 614