Analytic large-signal modeling of silicon RF power MOSFETs

被引：5

作者：

Fioravanti, Paolo ^{[1
]}

Spulber, Oana ^{[1
]}

De Souza, Maria Merlyne ^{[1
]}

机构：

[1] De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2007年 / 55卷 / 05期

关键词：

circuit analysis; impedance matching; microwave power amplifiers; semiconductor device model;

D O I：

10.1109/TMTT.2007.895403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper provides novel analytic expressions and methodology for predicting the large-signal gain of RF power MOSFETs. The expressions are derived from a model that includes input and output matching impedances, source inductance, and gate resistance. Using the load line concept superimposed on a nonlinear current generator, this paper demonstrates reasonably accurate predictions of gain and gain compression point.

引用

页码：829 / 837

页数：9

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