Regulating the circular polarization in nitride-based light-emitting diodes through the spin injection

被引：7

作者：

Wu, Yaping ^{[1
]}

Chen, Jiajun ^{[1
]}

Zhou, Jiangpeng ^{[1
]}

Lan, Jinshen ^{[1
]}

Zeng, Hao ^{[1
]}

He, Bing ^{[1
]}

Zhong, Zhibai ^{[1
]}

Guo, Jian ^{[1
]}

Song, Anke ^{[1
]}

Xia, Yuanzheng ^{[1
]}

Li, Xu ^{[1
]}

Wu, Zhiming ^{[1
]}

Huang, Shengli ^{[1
]}

Kang, Junyong ^{[1
]}

机构：

[1] Xiamen Univ, Fujian Prov Key Lab Semicond Mat & Applicat, Jiujiang Res Inst, Dept Phys,OSED, Xiamen 361005, Fujian, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 12期

关键词：

SILICON;

D O I：

10.7567/1882-0786/ab54a1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Circular polarization in nitride-based light-emitting diodes is investigated and regulated through the spin injection. Ferromagnet/dielectric are grown on n-type GaN as electron injector. Ultrathin quantum wells with quantum confinement effect are designed for enhancement of the circular polarizations in electroluminescence. By modulating the tunneling layer thickness and injection polarizer material, the preferred spin injection structure is determined. Room temperature circular polarization for surface-emission is optimized to 9.0% at most under a vertical magnetic field for the spin injecting contact. Spin relaxation time and diffusion length of about 34.9;ps and 134.5;nm, respectively, are revealed through the non-local three-terminal spin valve measurements.

引用

页数：5

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