Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

被引：12
|
作者：
Guo, H [1 ]
Sun, ZL
He, QY
Du, SM
Wu, XB
Wang, ZN
Liu, XJ
Cai, YH
Diao, XG
Li, GH
Tang, WZ
Zhong, GF
Huang, TB
Liu, JM
Jiang, Z
Lu, FX
机构：
[1] Hebei Prov Acad Sci, Shijiazhuang 050081, Peoples R China
[2] Univ Sci & Technol Beijing, Dept Mat Sci, Beijing 100083, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 2000年 / 9卷 / 9-10期
关键词：
DC arc plasma jet; chemical vapor deposition; diamond wafer;
D O I：
10.1016/S0925-9635(00)00289-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have successfully developed a system for deposition of large area diamond films by a DC are plasma jet operated in gas recycling mode. In the present paper, the influence of substrate temperature, methane concentration, flow rate of feeding gas and the input power of the jet for diamond film deposition is presented. Deposition of a large area of uniform thickness high quality diamond wafer of Phi 65 mm in diameter at a growth rate of 15 mu m/h is reported. The thickness of the wafer is 0.7 mm and the thermal conductivity can be 18.1 W/cm K. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：1673 / 1677
页数：5
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