Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2

被引：1

作者：

Kwon, Hyuk-Min ^{[2
]}

Kim, Do-Kywn ^{[1
]}

Lim, Sung-Kyu ^{[3
]}

Hwang, Hae-Chul ^{[3
]}

Son, Seung Woo ^{[1
]}

Park, Jung Ho ^{[1
]}

Park, Won-Sang ^{[1
]}

Kim, Jin Su ^{[1
]}

Shin, Chan-Soo ^{[2
]}

Park, Won-Kyu ^{[2
]}

Lee, Jung Hee ^{[1
]}

Kim, Taewoo ^{[4
]}

Kim, Dae-Hyun ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea

[2] KANC, Suwon, South Korea

[3] NNFC, Daejeon, South Korea

[4] Samsung, Austin, TX USA

来源：

SOLID-STATE ELECTRONICS | 2016年 / 121卷

关键词：

Reliability; InGaAs; MOSFET; High-k; Logic; DEVICES;

D O I：

10.1016/j.sse.2016.03.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an instability investigation of In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate with Al2O3 and Al2O3/HfO2 gate stacks. The device with bi-layer Al2O3/HfO2 gate stack exhibits larger shift in threshold-voltage (DVT) under a constantvoltage- stress condition (CVS), than one with single Al2O3 gate stack. At cryogenic temperature, the device with bi-layer Al2O3/HfO2 gate stack also induces worse hysteresis behavior than one with single Al2O3 gate stack. These are mainly attributed to more traps inside the HfO2 material, yielding a charge build-up inside the HfO2 gate dielectric. This strongly calls for a follow-up process to minimize those traps within the high-k dielectric layer and eventually to improve the reliability of InGaAs MOSFETs with HfO2-based high-k gate dielectric. (C) 2016 Published by Elsevier Ltd.

引用

页码：16 / 19

页数：4

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