Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

被引：1760
|
作者：
Schmidt, G
Ferrand, D
Molenkamp, LW
Filip, AT
van Wees, BJ
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
[2] Univ Groningen, Dept Appl Phys, NL-9747 AG Groningen, Netherlands
[3] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.62.R4790
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have calculated the spin-polarization effects of a current in a two-dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1% only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.
引用
收藏
页码：R4790 / R4793
页数：4
相关论文
共 50 条
  • [1] Spin injection from a ferromagnetic metal into a semiconductor
    Jaffrès, H
    Fert, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 8111 - 8113
  • [2] Electrical Spin Injection in a Ferromagnetic Metal/Insulator/Semiconductor Tunnel Heterostructure
    V. F. Motsnyi
    V. I. Safarov
    P. van Dorpe
    J. Das
    W. van Roy
    E. Goovaerts
    G. Borghs
    J. De Boeck
    [J]. Journal of Superconductivity, 2003, 16 : 671 - 678
  • [3] Electrical spin injection in a ferromagnetic metal/insulator/semiconductor tunnel heterostructure
    Motsnyi, VF
    Safarov, VI
    van Dorpe, P
    Das, J
    van Roy, W
    Goovaerts, E
    Borghs, G
    De Boeck, J
    [J]. JOURNAL OF SUPERCONDUCTIVITY, 2003, 16 (04): : 671 - 678
  • [4] Electrical spin injection in a ferromagnetic semiconductor heterostructure
    Ohno, Y
    Young, DK
    Beschoten, B
    Matsukura, F
    Ohno, H
    Awschalom, DD
    [J]. NATURE, 1999, 402 (6763) : 790 - 792
  • [5] Electrical spin injection in a ferromagnetic semiconductor heterostructure
    Y. Ohno
    D. K. Young
    B. Beschoten
    F. Matsukura
    H. Ohno
    D. D. Awschalom
    [J]. Nature, 1999, 402 : 790 - 792
  • [6] Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures
    Young, DK
    Johnston-Halperin, E
    Awschalom, DD
    Ohno, Y
    Ohno, H
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (09) : 1598 - 1600
  • [7] Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures
    Ohno, Y
    Arata, I
    Matsukura, F
    Ohno, H
    Young, DK
    Beschoten, B
    Awschalom, DD
    [J]. PHYSICA E, 2001, 10 (1-3): : 489 - 492
  • [8] Spin-polarized Carrier Injection Effect in Ferromagnetic Semiconductor/Diffusive Semiconductor/Superconductor Junctions
    Akazaki, T.
    Sawa, Y.
    Yokoyama, T.
    Tanaka, Y.
    Golubov, A. A.
    Munekata, H.
    Nishizawa, N.
    Takayanagi, H.
    [J]. 25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 2, 2009, 150
  • [9] SPIN-POLARIZED CARRIER INJECTION EFFECT IN FERROMAGNETIC SEMICONDUCTOR/DIFFUSIVE SEMICONDUCTOR/SUPERCONDUCTOR JUNCTIONS
    Takayanagi, H.
    Akazaki, T.
    Nishizawa, N.
    Sawa, Y.
    Yokoyama, T.
    Tanaka, Y.
    Golubov, A. A.
    Munekata, H.
    [J]. PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY, 2009, : 118 - +
  • [10] Coherent spin-valve phenomena and electrical spin injection in ferromagnetic/semiconductor/ferromagnetic junctions
    Mireles, F
    Kirczenow, G
    [J]. PHYSICAL REVIEW B, 2002, 66 (21) : 1 - 13
12345