Composition and stress analysis in si structures using micro-Raman spectroscopy

被引：0

作者：

McCarthy, J ^{[1
]}

Bhattacharya, S

Perova, TS

Moore, RA

Gamble, H

Armstrong, BM

机构：

[1] Univ Dublin Trinity Coll, Dept Elect & Elect Engn, Dublin 2, Ireland

[2] Queens Univ Belfast, Sch Elect & Elect Engn, Belfast, Antrim, North Ireland

来源：

SCANNING | 2004年 / 26卷 / 05期

关键词：

relaxed silicon germanium; strained silicon; Raman scattering; low-pressure chemical vapour deposition; transmission electron microscopy;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Strained silicon (Si) technology enables improvements in complementary metal oxide semiconductor (CMOS) performance and functionality via replacement of the bulk, cubic-crystal Si substrate with an Si substrate that contains a tetragonally distorted, biaxially strained Si thin film at the surface. Here we use Raman spectroscopy to allow us to characterise growth processes of strained si, and to characterise the resulting level of strain/stress in the si and the effect it has on the underlying layer of graded SiGe.

引用

页码：235 / 239

页数：5

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