Flat-band localization in weakly disordered system

被引:34
|
作者
Nishino, Shinya [1 ]
Matsuda, Hiroki
Goda, Masaki
机构
[1] Hokkaido Univ, Grad Sch Engn, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan
[2] Niigata Univ, Grad Sch Sci & Technol, Niigata 9502181, Japan
[3] Niigata Univ, Fac Engn, Niigata 9502181, Japan
关键词
flat band; Anderson transition; localized state; level statistics; multifractal; inverse participation ratio;
D O I
10.1143/JPSJ.76.024709
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a detailed analysis of the insulator-metal-insulator transition of a disordered system, starting from a characteristic three-dimensional system possessing highly degenerated localized eigenstates. The finite-size scaling of level statistics and multifractal analysis for systems larger than those in the previous study show the transition points more clearly. We clarify whether the eigenstates are indeed localized or extended at several energies for several strengths of disorder by examining also the inverse participation ratio of the wave functions. In particlular, we clarify that the localization for weak disorder is different from the ordinary one in the sense that the strength of localization is independent of the strength of disorder. The localization persists even when the strength of disorder is numerically as small as possible, 10(-13) in our present numerical study.
引用
收藏
页数:8
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