High Internal Quantum Efficiency AlGaN Epilayer Grown by Molecular Beam Epitaxy on Si Substrate

被引：9
|
作者：
Yin, Xue [1 ]
Zhao, Songrui [1 ]
机构：
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2021年 / 10卷 / 07期
基金：
加拿大自然科学与工程研究理事会;
关键词：
ALN; CONSTANTS; NITRIDE; FILMS;
D O I：
10.1149/2162-8777/ac0f15
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the molecular beam epitaxy growth and characterization of aluminum gallium nitride (AlGaN) epilayer on an Si substrate. The AlGaN epilayer was grown on an AlN buffer layer through a coalescence process on a nanowire template. The AlGaN epilayer possessed a relatively smooth surface. The room-temperature internal quantum efficiency (IQE) was investigated using power-dependent photoluminescence experiments and theoretical analysis. A maximum IQE of around 50% is derived, with an estimated carrier density of 3 x 10(18) cm(-3). This IQE is significantly improved compared to the previously reported bulk AlGaN epilayers grown on sapphire and/or AlN-on-sapphire templates. The efficiency droop mechanism is also discussed, which could presumably be attributed to the carrier delocalization.
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页数：5
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