Microscope Investigation and Electrical Conductivity of Si Doped n-type Al0.45Ga0.55N layer grown on AlGaN/AlN Superlattices

被引：0
|
作者：
Jeon, S. R. [1 ]
Son, S. J. [2 ]
Park, S. -H. [3 ]
机构：
[1] Korea Photon Technol Inst, Applicat Module Res Ctr, Kwangju 500779, South Korea
[2] LG Innotek, LED Prod Technol Div, Paju Si 413901, South Korea
[3] Yeungnam Univ, Dept Elect Engn, Gyongsan 712749, Gyeongsangbuk, South Korea
来源：
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII | 2014年 / 9003卷
关键词：
n-type AlGaN layer; high Al composition; AlGaN/AlN superlattices; THREADING-DISLOCATION-DENSITY; GAN; REDUCTION; FABRICATION; OVERGROWTH;
D O I：
10.1117/12.2041398
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the growth and characterization of a Si-doped, n-type AlGaN layer with 45% Al composition. For the application of n-type AlGaN layers with high Al composition in ultraviolet emitters, we fabricated an n-Al0.45Ga0.55N layer with high crystalline quality and high electrical conductivity by inserting Al0.85Ga0.15N/AlN superlattices (SLs) to prevent cracks prior to growing the n-type AlGaN layer. The dislocation density in the n-AlGaN layer with 45% Al composition and SLs was less than 2.4 x 10(10) cm(-2), which was lower than the dislocation density of 5.3 x 10(10) cm(-2) for the n-AlGaN layer without SLs. The resistivity, mobility, and free electron concentration in the n-type Al0.45Ga0.55N layer with SLs were 2.2 x 10(-2) Omega.cm, 55.0 cm(2)/V-s, and 5.0 x 10(18) cm(-3) at room temperature, respectively.
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页数：7
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