1.3μm InAsP quantum well lasers grown by solid source MBE

被引：6
|
作者：
Mottahedeh, R
Haywood, SK
Woodbridge, K
Hopkinson, M
Hill, G
Rivers, A
机构：
[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[2] Univ Hull, Dept Elect Engn, Kingston Upon Hull HU6 7RX, N Humberside, England
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 1998年 / 145卷 / 01期
关键词：
quantum well lasers; solid source MBE; quaternary barriers;
D O I：
10.1049/ip-opt:19981912
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the design, growth and optical properties of InAsP/InGaAsP and InAsP/InGaP lasers with compressively-strained quantum wells, Both tensile-strained and lattice-matched quaternary barriers were investigated. Strain-compensated structures, i.e. those with tensile-strained barriers, show narrow photoluminescence and X-ray diffraction linewidths indicating high crystalline quality. These devices were subsequently processed into ridge waveguide lasers and a threshold current of similar to 1 kA/cm(2) was obtained for a strain-compensated five well structure.
引用
收藏
页码：3 / 6
页数：4
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