1.3μm InAsP quantum well lasers grown by solid source MBE

The authors report the design, growth and optical properties of InAsP/InGaAsP and InAsP/InGaP lasers with compressively-strained quantum wells, Both tensile-strained and lattice-matched quaternary barriers were investigated. Strain-compensated structures, i.e. those with tensile-strained barriers, show narrow photoluminescence and X-ray diffraction linewidths indicating high crystalline quality. These devices were subsequently processed into ridge waveguide lasers and a threshold current of similar to 1 kA/cm(2) was obtained for a strain-compensated five well structure.