Numerical simulations on CZTS/CZTSe based solar cell with ZnSe as an alternative buffer layer using SCAPS-1D

被引:33
|
作者
Srivastava, Ashutosh [1 ]
Dua, Piyush [2 ]
Lenka, T. R. [1 ]
Tripathy, S. K. [1 ]
机构
[1] Natl Inst Technol, Dept Elect & Commun, Solar Cell Fabricat Lab, Silchar, India
[2] Univ Technol & Appl Sci Suhar, Dept Engn, Sohar, Oman
关键词
Solar cell; Buffer layer; Defect; SCAPS-1D; DEVICE;
D O I
10.1016/j.matpr.2020.10.986
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In CZTS based solar cells, there have been intensive research to replace the toxic CdS buffer layer with alternative materials. In this paper, we proposed and simulated structure of CZTS/CZTSe based Solar Cell Al-ZnO/i-ZnO/ZnSe/Absorber/Mo with ZnSe as a buffer layer using SCAPS-1D simulator. Further, we have investigated the same structure employing different absorber layers such as CZTS, CZTSe and stacking of CZTS and CZTSe sequentially. The optimization of solar cell device is carried out and efficiency found to be 16.24%, 19.59% and 21.17% where the thickness of the absorber layer is 1.5 mm, 1 mm, 2.5 mm and 1 mm, respectively, for CZTS, CZTSe and stacking of CZTS and CZTSe. The calculated values of efficiency (g), fill factor (FF), open circuit voltage (Voc) and current density (Jsc) are compared with the data available in literature with CdS as the buffer layer. (c) 2020 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology.
引用
收藏
页码:3735 / 3739
页数:5
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