Deep UV Sensors Enabling Solar-Blind Flame Detectors for Large-Area Applications

被引:28
|
作者
Avila-Avendano, Carlos [1 ]
Pintor-Monroy, Maria I. [1 ]
Ortiz-Conde, Adelmo [2 ]
Caraveo-Frescas, Jesus A. [1 ]
Quevedo-Lopez, Manuel A. [1 ]
机构
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[2] Univ Simon Bolivar, Solid State Elect Lab, Caracas 1080, Venezuela
关键词
Flame detector; gallium oxide; poly-Si thin-film transistors; UV detectors; ULTRAVIOLET; TEMPERATURE; PERFORMANCE; LIGHT; BETA-GA2O3; DECONTAMINATION;
D O I
10.1109/JSEN.2021.3071980
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Large-area compatible, solar-blind deep-ultraviolet sensors based on active pixels are demonstrated with CMOS amplifiers based on poly-Si thin-film transistors and Ga2 O3 thin-film photoresistors. The active pixel configuration sensor enables approximately 40X higher responsivity compared to a discrete sensor, and the CMOS inverter amplifier exhibits a gain of 210 VN. The Ga-2 O-3-based sensors were integrated on the same substrate depositing the films using magnetron sputtering at room temperature, ensuring its compatibility with large-area applications. The responsivity of discrete Ga-2 O-3 sensors was evaluated at different wavelengths in the deep-ultraviolet and visible ranges, and showed a maximum responsivity of 51 MW for a wavelength of 232 nm, with a deep-ultraviolet to visible light rejection ratio of approximately 10(2). The active pixel sensor was implemented as flame detector resulting in an output voltage signal of up to 2 V when the system was exposed to a flame under regular background illumination conditions.
引用
收藏
页码:14815 / 14821
页数:7
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