Large-scale Growth and Simultaneous Doping of Molybdenum Disulfide Nanosheets

被引：15
|
作者：
Kim, Seong Jun [1 ,2 ]
Kang, Min-A [1 ]
Kim, Sung Ho [1 ]
Lee, Youngbum [1 ]
Song, Wooseok [1 ]
Myung, Sung [1 ]
Lee, Sun Sook [1 ]
Lim, Jongsun [1 ]
An, Ki-Seok [1 ,3 ]
机构：
[1] KRICT, Thin Film Mat Res Ctr, Daejeon 305600, South Korea
[2] Univ Sci & Technol, Nanomat Sci & Engn, Daejeon 305350, South Korea
[3] Univ Sci & Technol, Chem Convergence Mat, Daejeon 305350, South Korea
来源：
SCIENTIFIC REPORTS | 2016年 / 6卷
关键词：
TRANSITION-METAL DICHALCOGENIDES; INTEGRATED-CIRCUITS; MONOLAYER MOS2; PHOTOLUMINESCENCE;
D O I：
10.1038/srep24054
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
A facile method that uses chemical vapor deposition (CVD) for the simultaneous growth and doping of large-scale molybdenum disulfide (MoS2) nanosheets was developed. We employed metalloporphyrin as a seeding promoter layer for the uniform growth of MoS2 nanosheets. Here, a hybrid deposition system that combines thermal evaporation and atomic layer deposition (ALD) was utilized to prepare the promoter. The doping effect of the promoter was verified by X-ray photoelectron spectroscopy and Raman spectroscopy. In addition, the carrier density of the MoS2 nanosheets was manipulated by adjusting the thickness of the metalloporphyrin promoter layers, which allowed the electrical conductivity in MoS2 to be manipulated.
引用
收藏
页数：7
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