Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal-insulator-semiconductor structures

被引：2

作者：

Tikhov, S. V. ^{[1
]}

Gorshkov, O. N. ^{[1
,2
]}

Koryazhkina, M. N. ^{[1
]}

Antonov, I. N. ^{[1
,2
]}

Kasatkin, A. P. ^{[1
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

[2] Lobachevsky State Univ Nizhny Novgorod, Res Inst Phys & Technol, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 02期

关键词：

OXIDE;

D O I：

10.1134/S1063785016020139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Specific features (abrupt changes in current caused by voltage variation) of nonequilibrium depletion in metal-insulator-semiconductor structures based on gallium arsenide and silicon with a 40-nm-thick film of yttria-stabilized zirconia were revealed. These features may help extend the range of application of the nonequilibrium depletion effect in microelectronics.

引用

页码：138 / 142

页数：5

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