Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal-insulator-semiconductor structures

被引：2
|
作者：
Tikhov, S. V. [1 ]
Gorshkov, O. N. [1 ,2 ]
Koryazhkina, M. N. [1 ]
Antonov, I. N. [1 ,2 ]
Kasatkin, A. P. [1 ]
机构：
[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
[2] Lobachevsky State Univ Nizhny Novgorod, Res Inst Phys & Technol, Nizhnii Novgorod 603950, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 02期
关键词：
OXIDE;
D O I：
10.1134/S1063785016020139
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Specific features (abrupt changes in current caused by voltage variation) of nonequilibrium depletion in metal-insulator-semiconductor structures based on gallium arsenide and silicon with a 40-nm-thick film of yttria-stabilized zirconia were revealed. These features may help extend the range of application of the nonequilibrium depletion effect in microelectronics.
引用
收藏
页码：138 / 142
页数：5
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