Siliconization for wall conditioning and its effect on plasma performance in HL-2A tokamak

被引:15
|
作者
Duan, X. R. [1 ]
Cao, Z. [1 ]
Cui, C. H. [1 ]
Cai, X. [1 ]
Sun, H. J. [1 ]
Ding, X. T. [1 ]
Pan, Y. D. [1 ]
Wang, M. X. [1 ]
Yang, Q. W. [1 ]
Song, X. M. [1 ]
Liu, D. Q. [1 ]
Liu, Y. [1 ]
Ji, X. Q. [1 ]
Cui, Z. Y. [1 ]
Zhou, Y. [1 ]
Liu, Yong [1 ]
机构
[1] Southwestern Inst Phys, Chengdu 610041, Peoples R China
关键词
plasma facing material; siliconization; wall recycling; density control;
D O I
10.1016/j.jnucmat.2007.01.185
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Wall conditioning with siliconization has been performed in the HL-2A tokamak to improve the plasma performance. It was based on the plasma chemical vapor deposition by using a four-anode glow discharge cleaning system and gas mixture of 90% He+ 10% SiH4. It was found that the main components of the residual gas were CO, H-2 and H2O. The amount of H2O was reduced from 49.5% to 24.5%. After siliconization, the impurity fluxes released from the first wall were reduced, especially the oxygen level (till to 10%) and high z impurities like Cu were decreased significantly. The total radiated power measured by the bolometer was decreased from 70% to 35%. A high density exceeding the Greenwald limit and energy confinement improvement have been achieved. The plasma operational region of HL-2A has been effectively broadened. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1340 / 1345
页数:6
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