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Siliconization for wall conditioning and its effect on plasma performance in HL-2A tokamak
被引:15
|作者:
Duan, X. R.
[1
]
Cao, Z.
[1
]
Cui, C. H.
[1
]
Cai, X.
[1
]
Sun, H. J.
[1
]
Ding, X. T.
[1
]
Pan, Y. D.
[1
]
Wang, M. X.
[1
]
Yang, Q. W.
[1
]
Song, X. M.
[1
]
Liu, D. Q.
[1
]
Liu, Y.
[1
]
Ji, X. Q.
[1
]
Cui, Z. Y.
[1
]
Zhou, Y.
[1
]
Liu, Yong
[1
]
机构:
[1] Southwestern Inst Phys, Chengdu 610041, Peoples R China
关键词:
plasma facing material;
siliconization;
wall recycling;
density control;
D O I:
10.1016/j.jnucmat.2007.01.185
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Wall conditioning with siliconization has been performed in the HL-2A tokamak to improve the plasma performance. It was based on the plasma chemical vapor deposition by using a four-anode glow discharge cleaning system and gas mixture of 90% He+ 10% SiH4. It was found that the main components of the residual gas were CO, H-2 and H2O. The amount of H2O was reduced from 49.5% to 24.5%. After siliconization, the impurity fluxes released from the first wall were reduced, especially the oxygen level (till to 10%) and high z impurities like Cu were decreased significantly. The total radiated power measured by the bolometer was decreased from 70% to 35%. A high density exceeding the Greenwald limit and energy confinement improvement have been achieved. The plasma operational region of HL-2A has been effectively broadened. (c) 2007 Elsevier B.V. All rights reserved.
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页码:1340 / 1345
页数:6
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