Inductively coupled plasma etching of ZnO

被引：1
|
作者：
Nordheden, Karen J. [1 ]
Dineen, Mark [2 ]
Welch, Colin
机构：
[1] Univ Kansas, Chem & Petrol Engn, Lawrence, KS 66045 USA
[2] Oxford Instruments Plasma Technol, Bristol BS49 4AP, Avon, England
来源：
ZINC OXIDE MATERIALS AND DEVICES II | 2007年 / 6474卷
关键词：
ZnO; dry etching; inductively coupled plasma; wide bandgap;
D O I：
10.1117/12.714048
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The etching characteristics of ZnO epitaxial layers in Oxford Plasmalab 100 ICP 180 and 380 systems are investigated. Etch rates are studied as a function of gas composition, ICP power and RF bias power. Surface profilometry and scanning electron microscopy are used to characterize etch rates and surface morphologies. Highlights from other recently published results are also discussed.
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收藏
页数：4
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