A Highly Reliable FRAM (Ferroelectric Random Access Memory)

被引：2

作者：

Kim, J. -H. ^{[1
]}

Jung, D. J. ^{[1
]}

Kang, Y. M. ^{[1
]}

Kim, H. H. ^{[1
]}

Jung, W. W. ^{[1
]}

Kang, J. Y. ^{[1
]}

Lee, E. S. ^{[1
]}

Kim, H. ^{[1
]}

Jung, J. Y. ^{[1
]}

Kang, S. K. ^{[1
]}

Hong, Y. K. ^{[1
]}

Kim, S. Y. ^{[1
]}

Koh, H. K. ^{[1
]}

Choi, D. Y. ^{[1
]}

Park, J. H. ^{[1
]}

Lee, S. Y. ^{[1
]}

Jeong, H. S. ^{[1
]}

Kim, K. ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Technol Dev Team 2, Semicond R&D Ctr, Memory Div, San 24, Yongin 449900, South Korea

来源：

2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年

关键词：

D O I：

10.1109/RELPHY.2007.369950

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

64 Mb FRAM with 1T1C (one-transistor and one-capacitor) cell architecture has progressed greatly for a robust level of reliability. Random-single-bits appeared from package-level tests are attributed mostly to extrinsic origins (e.g. interconnection failures) rather than intrinsic ones. The extrinsic failures can be linked to two activation energies: while one is 0.27 eV originated from oxygen-vacancy movements at the top interface and grain boundary in the ferroelectric films, the other is 0.86 eV caused by imperfection in either the top-electrode contact (TEC), or the bottom-electrode contact (BEC), or both, of the cell capacitor. As a result of applying novel schemes to remove the analyzed defectives, we have the FRAM with no bit failure up to 1000 hours over both high-temperature-operating-life (HTOL) and high-temperature-storage (HTS) tests.

引用

页码：554 / +

页数：2

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