Scanning near-field thermoelectric microscopy for subsurface nanoscale thermoelectric behavior

被引:4
|
作者
Xu, K. Q. [1 ,2 ]
Zeng, H. R. [1 ]
Zhao, K. Y. [1 ]
Li, G. R. [1 ]
Shi, X. [3 ]
Chen, L. D. [3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
THERMAL-CONDUCTIVITY; RESOLUTION; GRAPHENE; FILMS; POWER; MODEL;
D O I
10.1007/s00339-016-0050-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel scanning near-field thermoelectric microscopy (STeM) was proposed and developed for characterizing subsurface, nanoscale Seebeck coefficient of thermoelectric energy materials. In STeM, near-field evanescent thermal wave was induced around the thermal probe's contact with the thermoelectric sample's surface via a periodically modulated heated thermal probe, giving rise to a thermoelectric near-field interaction with simultaneous excitation of three harmonic signals for local Seebeck coefficient derivation. The near-field STeM was capable of characterizing local Seebeck coefficient of thermoelectric materials with high lateral resolution at nanometer scale and more importantly provides a convenient, powerful tool for quantitative characterization of subsurface nanoscale thermoelectric properties.
引用
收藏
页数:6
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