Note: Near infrared interferometric silicon wafer metrology

被引：1
|
作者：
Choi, M. S. [1 ]
Park, H. M. [1 ]
Joo, K. N. [1 ]
机构：
[1] Chosun Univ, Dept Photon Engn, Gwangju 61452, South Korea
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2016年 / 87卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
REFRACTIVE-INDEX MEASUREMENT; FEMTOSECOND PULSE LASER; THICKNESS;
D O I：
10.1063/1.4948292
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this investigation, two near infrared (NIR) interferometric techniques for silicon wafer metrology are described and verified with experimental results. Based on the transparent characteristic of NIR light to a silicon wafer, the fiber based spectrally resolved interferometry can measure the optical thickness of the wafer and stitching low coherence scanning interferometry can reconstruct entire surfaces of the wafer. Published by AIP Publishing.
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页数：3
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