SiC homoepitaxial growth at low temperature by vapor-liquid-solid mechanism in Al-Si melt

Homoepitaxial growth of SiC was successfully performed at a temperature as low as 1100 degreesC via a vapor-liquid-solid (VLS) mechanism where propane feeds an Al-Si droplet. This approach has several advantages compared to the conventional liquid-phase epitaxy (LPE) such as an easier mastering of the growth as no thermal gradient (vertical or radial) needs to be controlled. We observed however the formation at the surface of small crystals during the cooling. Some small nonwetted zones are also seen, but they occupy less than 1% of the sample area. Both defects were also present in LPE configuration.