SiC homoepitaxial growth at low temperature by vapor-liquid-solid mechanism in Al-Si melt

被引：10
|
作者：
Jacquier, C
Ferro, G
Cauwet, F
Chaussende, D
Monteil, Y
机构：
[1] Univ Lyon 1, Lab Multimat & Interfaces, UMR 56 15, F-69622 Villeurbanne, France
[2] NOVASiC, Savoie Tecnolac, F-73375 Le Bourget Du Lac, France
来源：
CRYSTAL GROWTH & DESIGN | 2003年 / 3卷 / 03期
关键词：
D O I：
10.1021/cg0256069
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Homoepitaxial growth of SiC was successfully performed at a temperature as low as 1100 degreesC via a vapor-liquid-solid (VLS) mechanism where propane feeds an Al-Si droplet. This approach has several advantages compared to the conventional liquid-phase epitaxy (LPE) such as an easier mastering of the growth as no thermal gradient (vertical or radial) needs to be controlled. We observed however the formation at the surface of small crystals during the cooling. Some small nonwetted zones are also seen, but they occupy less than 1% of the sample area. Both defects were also present in LPE configuration.
引用
收藏
页码：285 / 287
页数：3
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