Characterization of (Ti, AI)N films prepared by ion mixing and vapor deposition

被引：16
|
作者：
Uchida, H [1 ]
Yamashita, M [1 ]
Hanaki, S [1 ]
Ueta, T [1 ]
机构：
[1] Himeji Inst Technol, Grad Sch Engn, Fac Engn, Dept Mech Engn, Himeji, Hyogo 6712201, Japan
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2004年 / 387卷
基金：
日本学术振兴会;
关键词：
titanium aluminum nitride; ion mixing and vapor deposition (IVD); phase transition; hard coating; pinhole defect; oxidation resistance;
D O I：
10.1016/j.msea.2004.03.096
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Titanium aluminum nitride (Ti, Al)N films were prepared by depositing Ti and Al metal vapor under simultaneous irradiation of N ions, that is ion mixing and vapor deposition (IVD) technique. With an increase of evaporation Al/Ti and/or transport ratio (Ti + Al)/N, a single-phase of NaCl structure in the films transformed into that of wurtzite structure through a two-phase mixture consisting of NaCl and wurtzite structure. Based on the revelation of two-phase structure, therefore, the optimum preparation conditions for wear- and corrosion-resistive hard coating were identified. The (Ti, Al)N films were also highly resistant against oxidation. Consequently, the results suggest that the Al oxide layers formed on the top of (Ti, AI)N films during elevated temperature oxidation tests protect the films from further oxidation. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：758 / 762
页数：5
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