Efficient spin-filter and negative differential resistance behaviors in FeN4 embedded graphene nanoribbon device

被引:9
|
作者
Liu, N. [1 ,2 ]
Liu, J. B. [1 ,2 ]
Yao, K. L. [3 ,4 ]
Ni, Y. [5 ]
Wang, S. L. [6 ]
机构
[1] Hubei Normal Univ, Coll Phys & Elect Sci, Huangshi 435002, Peoples R China
[2] Hubei Normal Univ, Hubei Key Lab Pollutant Anal & Reuse Technol, Huangshi 435002, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China
[4] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
[5] Huazhong Univ Sci & Technol, Wenhua Coll, Wuhan 430074, Peoples R China
[6] Hebei Univ Engn, Sch Sci, Handan 056038, Peoples R China
基金
中国国家自然科学基金;
关键词
NITROGEN-DOPED GRAPHENE; TRANSPORT;
D O I
10.1063/1.4943500
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we propose a new device of spintronics by embedding two FeN4 molecules into armchair graphene nanoribbon and sandwiching them between N-doped graphene nanoribbon electrodes. Our first-principle quantum transport calculations show that the device is a perfect spin filter with high spin-polarizations both in parallel configuration (PC) and antiparallel configuration (APC). Moreover, negative differential resistance phenomena are obtained for the spin-down current in PC, and the spin-up and spin-down currents in APC. These transport properties are explained by the bias-dependent evolution of molecular orbitals and the transmission spectra. (C) 2016 AIP Publishing LLC.
引用
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页数:5
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