Brittle to ductile transition dependence upon the transition pressure value of semiconductors in micromachining

被引：17

作者：

Jasinevicius, RG

Pizani, PS

Duduch, JG

机构：

[1] Univ Sao Paulo, Escola Engn Sao Carlos, Dept Engn Mecan, BR-13560970 Sao Carlos, SP, Brazil

[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

来源：

JOURNAL OF MATERIALS RESEARCH | 2000年 / 15卷 / 08期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1557/JMR.2000.0243

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-point diamond turning tests were carried out in two different [001]-oriented semiconductors, InSb and Si single crystals. The analysis of the conditions in which the machining is in ductile or brittle mode indicates that the plasticity presented by semiconductor crystals during micromachining can be correlated to the value of the transition pressure. It is shown that the ductility presented by different semiconductor single crystals is inversely related to the transition pressure value of the material.

引用

页码：1688 / 1692

页数：5

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