K-band capacitive MEMS-switches

In this paper single-pole single-throw It-Band microelectromechanical capacitive switches are discussed, exhibiting Low insertion losses (< 0.3 dB @ 21 GHz) and good isolation (34 dB @ 21 GHz). Depending on the respective geometry, an electromechanical characterization yields actuation voltages from 16 to 33 V and switching times around 10 mu s. Furthermore resonance frequencies above 50 kHz have been measured. The switches are integrated in coplanar transmission lines on high resistivity silicon substrates. In order to be compatible with present semiconductor device technology, the fabrication process mainly employs copper and aluminum metallisations.